JAN2N3636L

Product Overview

The JAN2N3636L is a high-performance silicon NPN transistor designed for various electronic applications. This transistor falls under the category of discrete semiconductor devices and is commonly used in amplification and switching circuits. Known for its reliability and versatility, the JAN2N3636L offers excellent characteristics such as high gain, low noise, and robust packaging.

Basic Information

• Category: Discrete Semiconductor Device
• Use: Amplification and Switching Circuits
• Characteristics: High Gain, Low Noise
• Package: TO-18 Metal Can
• Essence: Silicon NPN Transistor
• Packaging/Quantity: Bulk Packaging, Quantity Varies

Specifications

• Collector-Base Voltage (Vcbo): 60V
• Collector-Emitter Voltage (Vceo): 40V
• Emitter-Base Voltage (Vebo): 5V
• Collector Current (Ic): 600mA
• Power Dissipation (Pd): 625mW
• Transition Frequency (ft): 150MHz
• Operating Temperature Range: -65°C to +200°C

Detailed Pin Configuration

The JAN2N3636L transistor features three pins: Collector (C), Base (B), and Emitter (E). The pin configuration is as follows: - Collector (C): Pin 1 - Base (B): Pin 2 - Emitter (E): Pin 3

Functional Features

• High Gain: Provides significant amplification capabilities.
• Low Noise: Minimizes unwanted signal interference.
• Robust Construction: Ensures durability and reliability in various applications.

Advantages and Disadvantages

Advantages

• Versatile Application: Suitable for a wide range of electronic circuits.
• Reliable Performance: Offers consistent and stable operation.
• Compact Size: Fits into compact circuit designs.

Disadvantages

• Limited Power Handling: Not suitable for high-power applications.
• Sensitivity to Overheating: Requires proper heat dissipation measures in certain conditions.

Working Principles

The JAN2N3636L operates based on the principles of bipolar junction transistors (BJTs). When a small current flows into the base terminal, it controls a larger current flow between the collector and emitter terminals. This amplification process forms the basis of its functionality in electronic circuits.

Detailed Application Field Plans

The JAN2N3636L finds extensive use in the following application fields: - Audio Amplifiers - Signal Processing Circuits - Oscillator Circuits - Switching Circuits - RF Amplification

Detailed and Complete Alternative Models

For applications requiring alternatives to the JAN2N3636L, the following models can be considered: - 2N2222A - BC547 - 2N3904 - MPS2222A - 2N4401

In conclusion, the JAN2N3636L silicon NPN transistor offers reliable performance and versatile application possibilities in electronic circuits, making it a valuable component in the realm of discrete semiconductor devices.

Word Count: 410