2SB1203S-TL-E
Product Category: Transistor
Basic Information Overview: - Category: Bipolar Junction Transistor (BJT) - Use: Amplification and switching in electronic circuits - Characteristics: High current and voltage capabilities, low power consumption - Package: SOT-89 package - Essence: NPN silicon transistor - Packaging/Quantity: Available in reels of 3000 units
Specifications: - Collector-Base Voltage (VCBO): 50V - Collector-Emitter Voltage (VCEO): 45V - Emitter-Base Voltage (VEBO): 5V - Collector Current (IC): 1.5A - Power Dissipation (PD): 1W - Transition Frequency (fT): 150MHz - Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration: - Pin 1 (Emitter): Connected to the emitter region of the transistor - Pin 2 (Base): Connected to the base region of the transistor - Pin 3 (Collector): Connected to the collector region of the transistor
Functional Features: - High current gain - Low saturation voltage - Fast switching speed
Advantages: - Small form factor - Suitable for high-frequency applications - Low noise performance
Disadvantages: - Limited power dissipation capability - Susceptible to thermal runaway at high currents
Working Principles: The 2SB1203S-TL-E operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its three terminals to amplify or switch electronic signals.
Detailed Application Field Plans: - Audio amplification circuits - Switching power supplies - RF amplifiers
Detailed and Complete Alternative Models: - 2SB1203-TL-E - 2SB1203S-TL-H - 2N3904
This comprehensive entry provides a detailed overview of the 2SB1203S-TL-E transistor, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
Lista 10 Vanliga frågor och svar relaterade till tillämpningen av 2SB1203S-TL-E i tekniska lösningar
What is the maximum collector current of 2SB1203S-TL-E?
- The maximum collector current of 2SB1203S-TL-E is 1.5A.
What is the maximum collector-emitter voltage of 2SB1203S-TL-E?
- The maximum collector-emitter voltage of 2SB1203S-TL-E is 50V.
What is the power dissipation of 2SB1203S-TL-E?
- The power dissipation of 2SB1203S-TL-E is 1W.
What are the typical applications of 2SB1203S-TL-E?
- Typical applications of 2SB1203S-TL-E include audio amplification, power management, and general switching purposes.
Is 2SB1203S-TL-E suitable for use in automotive electronics?
- Yes, 2SB1203S-TL-E is suitable for use in automotive electronics due to its high current and voltage capabilities.
What is the thermal resistance of 2SB1203S-TL-E?
- The thermal resistance of 2SB1203S-TL-E is typically around 83°C/W.
Does 2SB1203S-TL-E require a heat sink for certain applications?
- Yes, for high-power applications, it is recommended to use a heat sink with 2SB1203S-TL-E to ensure proper thermal management.
Can 2SB1203S-TL-E be used in audio amplifier circuits?
- Yes, 2SB1203S-TL-E is commonly used in audio amplifier circuits due to its high current handling capability.
What are the key electrical characteristics of 2SB1203S-TL-E?
- Key electrical characteristics include high current gain, low saturation voltage, and fast switching speed.
Are there any specific precautions to consider when using 2SB1203S-TL-E in technical solutions?
- It is important to ensure proper heat dissipation and voltage regulation when integrating 2SB1203S-TL-E into technical solutions to maximize its performance and reliability.