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BC818-40LT1G

BC818-40LT1G

Product Overview

Category: Transistor
Use: Amplification and switching of electronic signals
Characteristics: High current gain, low saturation voltage
Package: SOT-23
Essence: NPN Silicon Transistor
Packaging/Quantity: Reel, 3000 units

Specifications

  • Collector-Emitter Voltage: 25V
  • Collector Current: 800mA
  • Power Dissipation: 225mW
  • Transition Frequency: 250MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

  1. Base (B)
  2. Emitter (E)
  3. Collector (C)

Functional Features

  • High current gain
  • Low saturation voltage
  • Fast switching speed
  • Small package size

Advantages and Disadvantages

Advantages: - High current gain allows for amplification of weak signals - Low saturation voltage reduces power dissipation - Fast switching speed enables rapid signal processing

Disadvantages: - Limited maximum collector current compared to other transistors - Relatively low collector-emitter voltage rating

Working Principles

The BC818-40LT1G operates as a bipolar junction transistor (BJT), where the flow of current is controlled by the application of a small input current at the base terminal. This controls the larger current flowing between the collector and emitter terminals, allowing for amplification or switching of electronic signals.

Detailed Application Field Plans

  1. Audio Amplification: Utilized in audio amplifiers to boost weak audio signals.
  2. Switching Circuits: Employed in electronic switches to control the flow of current.
  3. Signal Processing: Used in signal processing circuits for amplification and filtering.

Detailed and Complete Alternative Models

  1. BC817-40LT1G
  2. BC846B
  3. 2N3904
  4. 2N2222A

This completes the entry for BC818-40LT1G, providing comprehensive information on its product details, specifications, features, and applications within the field of electronics.

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av BC818-40LT1G i tekniska lösningar

  1. What is the maximum collector current of BC818-40LT1G?

    • The maximum collector current of BC818-40LT1G is 800mA.
  2. What is the typical hFE (DC current gain) of BC818-40LT1G?

    • The typical hFE of BC818-40LT1G is 250-600 at a collector current of 100mA.
  3. What is the maximum power dissipation of BC818-40LT1G?

    • The maximum power dissipation of BC818-40LT1G is 225mW.
  4. What are the typical applications of BC818-40LT1G?

    • BC818-40LT1G is commonly used in low power amplification and switching applications.
  5. What is the maximum voltage between base and emitter (VCEO) of BC818-40LT1G?

    • The maximum VCEO of BC818-40LT1G is 25V.
  6. What is the maximum voltage between collector and emitter (VCE) of BC818-40LT1G?

    • The maximum VCE of BC818-40LT1G is 30V.
  7. Is BC818-40LT1G suitable for use in high-frequency applications?

    • Yes, BC818-40LT1G is suitable for use in high-frequency applications due to its high transition frequency (fT).
  8. What is the thermal resistance junction to ambient (RθJA) of BC818-40LT1G?

    • The thermal resistance junction to ambient of BC818-40LT1G is approximately 417°C/W.
  9. Can BC818-40LT1G be used in battery-powered applications?

    • Yes, BC818-40LT1G is suitable for battery-powered applications due to its low collector cutoff current and low saturation voltage.
  10. Are there any recommended alternative transistors to BC818-40LT1G for similar applications?

    • Some recommended alternative transistors for similar applications include BC817-40LT1G, BC846B, and BC847B.