FQA38N30

Product Overview

Category:

The FQA38N30 belongs to the category of power MOSFETs.

Use:

It is commonly used in power supply applications, motor control, and other high-power switching applications.

Characteristics:

• High voltage capability
• Low on-resistance
• Fast switching speed
• High reliability

Package:

The FQA38N30 is typically available in a TO-3P package.

Essence:

This MOSFET is essential for efficient power management and control in various electronic systems.

Packaging/Quantity:

Typically packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

• Drain-Source Voltage (VDS): 300V
• Continuous Drain Current (ID): 38A
• On-Resistance (RDS(on)): 0.038Ω
• Power Dissipation (PD): 200W
• Gate-Source Voltage (VGS): ±20V
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The FQA38N30 has a standard pin configuration with three pins: gate, drain, and source.

Functional Features

• High voltage capability allows for use in various power applications.
• Low on-resistance minimizes power loss and improves efficiency.
• Fast switching speed enables rapid response in switching applications.

Advantages and Disadvantages

Advantages

• High voltage capability
• Low on-resistance
• Fast switching speed
• High reliability

Disadvantages

• Higher cost compared to lower-rated MOSFETs
• Larger physical size due to higher power handling capability

Working Principles

The FQA38N30 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

The FQA38N30 is well-suited for use in the following applications: - Power supplies - Motor control systems - High-power switching circuits - Inverters and converters

Detailed and Complete Alternative Models

Some alternative models to the FQA38N30 include: - IRFP250N - STP36NF06L - FDP8878

In conclusion, the FQA38N30 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for various power management and control applications.

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