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FQB2N50TM
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FQB2N50TM

Product Overview

Category

The FQB2N50TM belongs to the category of power MOSFETs.

Use

It is commonly used in power supply applications, motor control, and other high voltage switching applications.

Characteristics

  • High voltage capability
  • Low gate charge
  • Fast switching speed
  • Low on-resistance

Package

The FQB2N50TM is typically available in a TO-263 package.

Essence

This MOSFET is essential for efficient power management and control in various electronic circuits.

Packaging/Quantity

It is usually packaged in reels with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 500V
  • Continuous Drain Current (ID): 2A
  • On-Resistance (RDS(on)): 3.5Ω
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 12nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The FQB2N50TM typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High voltage capability allows for use in various power applications.
  • Low gate charge enables fast switching, reducing power losses.
  • Low on-resistance minimizes conduction losses.

Advantages and Disadvantages

Advantages

  • High voltage capability suitable for diverse applications
  • Low gate charge for efficient switching
  • Low on-resistance for reduced conduction losses

Disadvantages

  • May require additional circuitry for driving at higher frequencies
  • Sensitivity to static electricity and overvoltage conditions

Working Principles

The FQB2N50TM operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

Power Supply Applications

The FQB2N50TM can be used in switch-mode power supplies for efficient voltage regulation and power conversion.

Motor Control

In motor control circuits, this MOSFET can be employed for driving and controlling high voltage motors.

High Voltage Switching Applications

Its high voltage capability makes it suitable for use in various high voltage switching applications such as inverters and converters.

Detailed and Complete Alternative Models

  • IRF840
  • STP16NF06L
  • FQP30N06L
  • IRFP460

In conclusion, the FQB2N50TM power MOSFET offers high voltage capability, low gate charge, and low on-resistance, making it suitable for a wide range of power management and control applications.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av FQB2N50TM i tekniska lösningar

  1. What is the maximum drain-source voltage of FQB2N50TM?

    • The maximum drain-source voltage of FQB2N50TM is 500V.

  2. What is the continuous drain current rating of FQB2N50TM?

    • The continuous drain current rating of FQB2N50TM is 2A.

  3. What is the on-resistance of FQB2N50TM?

    • The on-resistance of FQB2N50TM is typically 4.5Ω.

  4. What is the gate threshold voltage of FQB2N50TM?

    • The gate threshold voltage of FQB2N50TM typically ranges from 2V to 4V.

  5. Can FQB2N50TM be used in high-frequency applications?

    • Yes, FQB2N50TM can be used in high-frequency applications due to its fast switching characteristics.

  6. Is FQB2N50TM suitable for use in power supplies?

    • Yes, FQB2N50TM is suitable for use in power supplies and other related applications.

  7. What is the typical input capacitance of FQB2N50TM?

    • The typical input capacitance of FQB2N50TM is around 700pF.

  8. Does FQB2N50TM require a heat sink for certain applications?

    • Yes, for high-power applications or when operating at high ambient temperatures, a heat sink may be required for FQB2N50TM.

  9. What are the recommended operating temperature range for FQB2N50TM?

    • The recommended operating temperature range for FQB2N50TM is -55°C to 150°C.

  10. Can FQB2N50TM be used in automotive applications?

    • Yes, FQB2N50TM can be used in automotive applications such as motor control and lighting systems.