MJD45H11T4G
Introduction
The MJD45H11T4G is a power transistor belonging to the category of NPN Darlington transistors. This device is commonly used in various electronic applications due to its high current and voltage capabilities. In this entry, we will provide an overview of the basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the MJD45H11T4G.
Basic Information Overview
- Category: NPN Darlington Transistor
- Use: Power amplification and switching applications
- Characteristics: High current and voltage capabilities, low saturation voltage
- Package: TO-252 (DPAK)
- Essence: Power transistor for high-performance applications
- Packaging/Quantity: Typically available in reels or tubes containing multiple units
Specifications
- Collector-Emitter Voltage (VCEO): 80V
- Collector Current (IC): 8A
- Power Dissipation (PD): 2W
- DC Current Gain (hFE): 1000 (min) @ IC = 4A
- Transition Frequency (fT): 30MHz
Detailed Pin Configuration
The MJD45H11T4G transistor has a standard TO-252 (DPAK) package with three pins: 1. Base (B) 2. Collector (C) 3. Emitter (E)
Functional Features
- High current gain and power dissipation capability
- Low saturation voltage for efficient switching
- Fast switching speed suitable for high-frequency applications
Advantages and Disadvantages
Advantages
- High current and voltage ratings
- Low saturation voltage
- Suitable for high-power applications
Disadvantages
- Relatively large package size compared to SMD alternatives
- Higher cost compared to general-purpose transistors
Working Principles
The MJD45H11T4G operates based on the principles of bipolar junction transistors, utilizing the Darlington pair configuration to achieve high current gain and power handling capabilities. When biased appropriately, it can amplify or switch electrical signals with minimal loss and high efficiency.
Detailed Application Field Plans
The MJD45H11T4G is commonly used in the following applications: - Power amplifiers - Motor control circuits - Switching power supplies - LED drivers - Audio amplifiers
Detailed and Complete Alternative Models
Some alternative models to the MJD45H11T4G include: - TIP122 - TIP127 - MJ11015 - MJ11016
In conclusion, the MJD45H11T4G NPN Darlington transistor offers high-performance characteristics suitable for various power amplification and switching applications. Its robust specifications, functional features, and wide application field make it a popular choice among electronic designers and hobbyists.
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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av MJD45H11T4G i tekniska lösningar
What is the MJD45H11T4G?
- The MJD45H11T4G is a NPN Darlington transistor designed for high-voltage applications.
What are the key features of the MJD45H11T4G?
- The MJD45H11T4G features a high DC current gain, low collector-emitter saturation voltage, and high voltage capability.
What are the typical applications of the MJD45H11T4G?
- Typical applications include relay drivers, hammer drivers, lamp drivers, and display drivers in automotive, industrial, and consumer applications.
What is the maximum collector current of the MJD45H11T4G?
- The maximum collector current is 8A.
What is the maximum collector-emitter voltage of the MJD45H11T4G?
- The maximum collector-emitter voltage is 80V.
What is the thermal resistance of the MJD45H11T4G?
- The thermal resistance is 62.5°C/W.
What is the operating temperature range of the MJD45H11T4G?
- The operating temperature range is -55°C to 150°C.
Does the MJD45H11T4G require external heat sinking?
- Yes, it is recommended to use external heat sinking for high-power applications.
Is the MJD45H11T4G RoHS compliant?
- Yes, it is RoHS compliant.
Where can I find the detailed datasheet for the MJD45H11T4G?
- The detailed datasheet can be found on the manufacturer's website or through authorized distributors.