BR25L040F-WE2

Product Overview

Category

The BR25L040F-WE2 belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices, such as microcontrollers, consumer electronics, and industrial equipment.

Characteristics

• Non-volatile: The BR25L040F-WE2 retains stored data even when power is disconnected.
• High capacity: It offers a storage capacity of 4 kilobits (512 bytes).
• Low power consumption: The device operates on low power, making it suitable for battery-powered applications.
• Fast data transfer: It supports high-speed data transfer rates, ensuring efficient read and write operations.
• Wide operating voltage range: The BR25L040F-WE2 can operate within a wide voltage range, enhancing its compatibility with different systems.

Package and Quantity

The BR25L040F-WE2 is available in a compact SOP-8 package. It is typically sold in reels containing a quantity of 2500 units.

Specifications

• Memory capacity: 4 kilobits (512 bytes)
• Operating voltage: 1.7V to 5.5V
• Data transfer speed: Up to 3 MHz
• Write endurance: 1 million cycles
• Data retention: 100 years
• Operating temperature range: -40°C to +85°C

Pin Configuration

The BR25L040F-WE2 features an 8-pin Small Outline Package (SOP-8) with the following pin configuration:

┌───┬───┐ │ 1 │ 8 │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ │ 4 │ 5 │ └───┴───┘

1. Chip Select (CS)
2. Serial Clock (SCK)
3. Serial Data Input/Output (SDI/O)
4. Ground (GND)
5. Serial Data Output (SDO)
6. Write Protect (WP)
7. Hold (HOLD)
8. Power Supply (VCC)

Functional Features

• Sequential read and write operations: The BR25L040F-WE2 supports sequential read and write operations, allowing efficient data access.
• Software write protection: It provides a write protect function that can be enabled or disabled through software control.
• Hardware write protection: The device also features a hardware write protect pin (WP) for additional data security.
• High-speed operation: With a maximum clock frequency of 3 MHz, the BR25L040F-WE2 ensures fast data transfer.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• Compact package size allows for easy integration into various electronic devices.
• Wide operating voltage range enhances compatibility with different systems.
• High-speed data transfer enables efficient read and write operations.

Disadvantages

• Limited storage capacity compared to other non-volatile memory devices.
• Lack of advanced security features found in some alternative models.

Working Principles

The BR25L040F-WE2 utilizes an electrically erasable programmable read-only memory (EEPROM) technology. It stores data by trapping charges within its floating gate transistors. These charges represent binary information, which can be read or modified using appropriate electrical signals.

Detailed Application Field Plans

The BR25L040F-WE2 finds applications in various fields, including but not limited to: - Microcontrollers and embedded systems - Consumer electronics (e.g., smart appliances, audio/video devices) - Industrial equipment and automation systems - Automotive electronics - Medical devices

Alternative Models

For users seeking alternative options, the following non-volatile memory devices can be considered: - BR25L080F-WE2: Offers double the storage capacity of the BR25L040F-WE2. - AT24C04: Provides similar functionality with a different pin configuration. - M93C46: Features a smaller package size for space-constrained applications.

These alternative models offer varying capacities, pin configurations, and package sizes to cater to different requirements.

In conclusion, the BR25L040F-WE2 is a non-volatile memory device primarily used for data storage in electronic devices. It offers high-speed operation, low power consumption, and a wide operating voltage range. While it has limitations in terms of storage capacity and advanced security features, it serves as a reliable solution for various applications across different industries.