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IRFD213

IRFD213

Product Overview

Category

The IRFD213 belongs to the category of power MOSFETs.

Use

It is commonly used as a switching device in electronic circuits.

Characteristics

  • Low on-resistance
  • Fast switching speed
  • High input impedance

Package

The IRFD213 is typically available in a TO-252 package.

Essence

This MOSFET is essential for controlling power in various electronic applications.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 200V
  • Continuous Drain Current (ID): 1.3A
  • RDS(ON) (Max) @ VGS = 10V: 2.5 Ohm
  • Input Capacitance (Ciss): 300pF
  • Power Dissipation (PD): 2.0W

Detailed Pin Configuration

The IRFD213 features a standard three-pin configuration: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low power consumption
  • High efficiency
  • Reliable performance in switching applications

Advantages and Disadvantages

Advantages

  • Low on-resistance reduces power loss
  • Fast switching speed enhances efficiency
  • High input impedance allows for easy drive circuitry

Disadvantages

  • Limited maximum drain-source voltage compared to some alternatives
  • Relatively low continuous drain current rating

Working Principles

The IRFD213 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the conductivity of the channel.

Detailed Application Field Plans

The IRFD213 finds extensive use in the following applications: - Switching power supplies - Motor control - LED lighting - Audio amplifiers - DC-DC converters

Detailed and Complete Alternative Models

Some alternative models to the IRFD213 include: - IRFZ44N - IRF3205 - IRL540

In conclusion, the IRFD213 power MOSFET offers efficient switching capabilities and is widely utilized in various electronic applications due to its favorable characteristics and performance.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IRFD213 i tekniska lösningar

  1. What is the IRFD213 used for?

    • The IRFD213 is a power MOSFET transistor commonly used in switching applications such as motor control, lighting control, and power supplies.

  2. What is the maximum voltage and current rating of the IRFD213?

    • The IRFD213 has a maximum voltage rating of 200 volts and a continuous drain current rating of 1.3 amperes.

  3. Can the IRFD213 be used for high-frequency switching applications?

    • Yes, the IRFD213 can be used for high-frequency switching due to its fast switching characteristics and low on-resistance.

  4. What are the typical applications of the IRFD213 in motor control?

    • The IRFD213 is commonly used in brushed DC motor control circuits and small motor driver modules.

  5. Does the IRFD213 require a heat sink for operation?

    • For most applications, the IRFD213 does not require a heat sink due to its low on-resistance and power dissipation characteristics.

  6. Is the IRFD213 suitable for use in automotive electronics?

    • Yes, the IRFD213 is suitable for use in automotive electronics, particularly in applications such as automotive lighting control and motor drive systems.

  7. What are the key thermal considerations when using the IRFD213 in a circuit?

    • It is important to ensure proper PCB layout and adequate ventilation to maintain the operating temperature within the specified limits.

  8. Can the IRFD213 be used in parallel to increase current handling capability?

    • Yes, the IRFD213 can be used in parallel to increase the current handling capability in high-power applications.

  9. What are the typical protection features recommended when using the IRFD213 in a circuit?

    • Overcurrent protection, overvoltage protection, and reverse polarity protection are recommended to safeguard the IRFD213 and the associated circuitry.

  10. Are there any common failure modes associated with the IRFD213?

    • Common failure modes include overcurrent stress leading to thermal runaway, voltage spikes causing breakdown, and ESD damage during handling and assembly. Proper design and protection measures can mitigate these risks.