köpa onsemi (Ansemi) NCV57000DWR2G Isolated high current and high efficiency IGBT gate drivers with internal galvanic isolation.

onsemi (Ansemi)

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NCV57000DWR2G

Isolated high current and high efficiency IGBT gate drivers with internal galvanic isolation.

Artikelnummer

NCV57000DWR2G

Kategori

Power Chip > Gate Driver IC

Tillverkare/varumärke

onsemi (Ansemi)

Inkapsling

SOIC-16-300mil

Förpackning

taping

Antal paket

1000

Beskrivning

The NCV57000 is a high current single-channel IGBT driver with internal galvanic isolation for high system efficiency and reliability in high power applications. Features include complementary inputs, open-drain FAULT and Ready outputs, active Miller clamp, accurate UVLO, DESAT protection, soft shutdown on DESAT, and separate high and low driver outputs (OUTH and OUTL ). The NCV57000 can accommodate 5V and 3.3V signals on the input side, and a wide bias voltage range on the driver side, including negative voltage capability. The NCV57000 offers > 5 kVrms (UL1577 rated) galvanic isolation and > 1200 Viorm (working voltage). The NCV57000 uses a wide body SOIC-16 encapsulation that guarantees 8 mm creepage distance between input and output, meeting reinforced safety insulation requirements.

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