IPB60R199CPAATMA1
Product Overview
Category
The IPB60R199CPAATMA1 belongs to the category of power MOSFETs.
Use
It is used as a high-voltage switching device in various electronic applications.
Characteristics
- High voltage capability
- Low gate charge
- Enhanced switching speed
- Low on-resistance
Package
The IPB60R199CPAATMA1 is available in a TO-220 package.
Essence
This MOSFET is essential for efficient power management and control in electronic circuits.
Packaging/Quantity
It is typically packaged in reels with a quantity of 250 units per reel.
Specifications
- Drain-Source Voltage (VDS): 600V
- Continuous Drain Current (ID): 3.6A
- On-Resistance (RDS(on)): 0.199Ω
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 18nC
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The IPB60R199CPAATMA1 has a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- High voltage capability allows for use in various power applications.
- Low gate charge enables fast switching and reduced power losses.
- Enhanced switching speed contributes to improved efficiency in power conversion.
Advantages and Disadvantages
Advantages
- High voltage capability
- Low on-resistance
- Fast switching speed
Disadvantages
- Limited continuous drain current compared to some alternative models
- Relatively higher gate charge
Working Principles
The IPB60R199CPAATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.
Detailed Application Field Plans
The IPB60R199CPAATMA1 is suitable for use in: - Switching power supplies - Motor control systems - LED lighting applications - Solar inverters
Detailed and Complete Alternative Models
Some alternative models to the IPB60R199CPAATMA1 include: - IPB60R199CPA - IPB60R199CP
In conclusion, the IPB60R199CPAATMA1 is a high-voltage power MOSFET with excellent characteristics for various electronic applications, despite having some limitations compared to alternative models.
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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IPB60R199CPAATMA1 i tekniska lösningar
What is the maximum drain-source voltage of IPB60R199CPAATMA1?
- The maximum drain-source voltage of IPB60R199CPAATMA1 is 600V.
What is the typical on-state resistance of IPB60R199CPAATMA1?
- The typical on-state resistance of IPB60R199CPAATMA1 is 199mΩ.
What is the maximum continuous drain current of IPB60R199CPAATMA1?
- The maximum continuous drain current of IPB60R199CPAATMA1 is 24A.
What is the gate-source threshold voltage of IPB60R199CPAATMA1?
- The gate-source threshold voltage of IPB60R199CPAATMA1 is typically 2.5V.
What are the recommended operating temperature range for IPB60R199CPAATMA1?
- The recommended operating temperature range for IPB60R199CPAATMA1 is -55°C to 150°C.
Is IPB60R199CPAATMA1 suitable for high-frequency switching applications?
- Yes, IPB60R199CPAATMA1 is suitable for high-frequency switching applications due to its low on-state resistance and fast switching characteristics.
Does IPB60R199CPAATMA1 have built-in protection features?
- IPB60R199CPAATMA1 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
Can IPB60R199CPAATMA1 be used in automotive applications?
- Yes, IPB60R199CPAATMA1 is designed for automotive applications and meets the necessary quality and reliability standards.
What is the gate charge of IPB60R199CPAATMA1?
- The gate charge of IPB60R199CPAATMA1 is typically 18nC.
Is IPB60R199CPAATMA1 RoHS compliant?
- Yes, IPB60R199CPAATMA1 is RoHS compliant, making it suitable for environmentally conscious designs.