IPB70N10S312ATMA1
Product Overview
Category
The IPB70N10S312ATMA1 belongs to the category of power MOSFETs.
Use
It is used for high-power switching applications in various electronic circuits and systems.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The IPB70N10S312ATMA1 is available in a TO-263-3 package.
Essence
This MOSFET is essential for efficient power management and control in electronic devices and systems.
Packaging/Quantity
It is typically packaged in reels with a specific quantity per reel, as per manufacturer specifications.
Specifications
- Drain-Source Voltage (VDS): 100V
- Continuous Drain Current (ID): 70A
- On-Resistance (RDS(on)): 31mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 60nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
The IPB70N10S312ATMA1 has a standard pin configuration with the following pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability for power applications
- Low on-resistance for reduced power dissipation
- Fast switching speed for improved efficiency
- Low gate charge for enhanced gate drive performance
Advantages
- Suitable for high-power applications
- Efficient power management
- Fast and reliable switching performance
Disadvantages
- May require careful thermal management due to high power dissipation
- Sensitivity to static electricity and overvoltage conditions
Working Principles
The IPB70N10S312ATMA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When the gate-source voltage is applied, it creates an electric field that modulates the conductivity of the channel, allowing for controlled switching of high currents.
Detailed Application Field Plans
The IPB70N10S312ATMA1 is commonly used in the following application fields: - Switch-mode power supplies - Motor control systems - Inverters and converters - Automotive electronics - Industrial automation
Detailed and Complete Alternative Models
Some alternative models to the IPB70N10S312ATMA1 include: - IRF1405PbF - FDP8878 - STP80NF55-06
In conclusion, the IPB70N10S312ATMA1 is a high-performance power MOSFET with excellent characteristics suitable for a wide range of high-power switching applications. Its efficient design and functional features make it a valuable component in various electronic systems and devices.
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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IPB70N10S312ATMA1 i tekniska lösningar
What is the maximum drain-source voltage of IPB70N10S3-12ATMA1?
- The maximum drain-source voltage is 100V.
What is the continuous drain current of IPB70N10S3-12ATMA1?
- The continuous drain current is 70A.
What is the on-resistance of IPB70N10S3-12ATMA1?
- The on-resistance is typically 9.5mΩ at Vgs = 10V.
Can IPB70N10S3-12ATMA1 be used in automotive applications?
- Yes, it is designed for automotive applications.
What is the operating temperature range of IPB70N10S3-12ATMA1?
- The operating temperature range is -55°C to 175°C.
Is IPB70N10S3-12ATMA1 suitable for high-frequency switching applications?
- Yes, it is suitable for high-frequency switching due to its low gate charge and input capacitance.
Does IPB70N10S3-12ATMA1 have built-in protection features?
- It has built-in overcurrent protection and thermal shutdown features.
What is the package type of IPB70N10S3-12ATMA1?
- It comes in a TO-263-3 package.
Can IPB70N10S3-12ATMA1 be used in power supply designs?
- Yes, it is commonly used in power supply and motor control applications.
Is there a recommended gate driver for IPB70N10S3-12ATMA1?
- A gate driver with strong current capability and fast switching characteristics is recommended for optimal performance.