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IPD60R1K0CEATMA1
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IPD60R1K0CEATMA1

Product Overview

Category

The IPD60R1K0CEATMA1 belongs to the category of power MOSFETs.

Use

It is used for power management and switching applications in various electronic devices and systems.

Characteristics

  • High voltage capability
  • Low input capacitance
  • Fast switching speed
  • Low on-resistance
  • Enhanced thermal performance

Package

The IPD60R1K0CEATMA1 is typically available in a TO-252 package.

Essence

This MOSFET is designed to provide efficient power management and switching capabilities in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels containing a specific quantity, typically 250 or 500 units per reel.

Specifications

  • Voltage Rating: 600V
  • Current Rating: 3.6A
  • RDS(ON): 1.0 Ohm
  • Package Type: TO-252
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPD60R1K0CEATMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low input capacitance for fast switching
  • High voltage capability for power management
  • Low on-resistance for efficient operation
  • Enhanced thermal performance for reliability

Advantages

  • Efficient power management
  • Fast switching speed
  • Enhanced thermal performance
  • Suitable for high voltage applications

Disadvantages

  • May require additional circuitry for certain applications
  • Sensitive to static discharge if mishandled

Working Principles

The IPD60R1K0CEATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to manage the flow of current through the device.

Detailed Application Field Plans

The IPD60R1K0CEATMA1 is commonly used in the following applications: - Switching power supplies - Motor control - LED lighting - Solar inverters - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to the IPD60R1K0CEATMA1 include: - IPD60R1K0C7ATMA1 - IPD60R1K0CEXKSA1 - IPD60R1K0CEXKRA1 - IPD60R1K0CEXKTA1

In conclusion, the IPD60R1K0CEATMA1 is a versatile power MOSFET with high voltage capability, fast switching speed, and enhanced thermal performance, making it suitable for a wide range of power management and switching applications.

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Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IPD60R1K0CEATMA1 i tekniska lösningar

  1. What is the maximum drain current of IPD60R1K0CEATMA1?

    • The maximum drain current of IPD60R1K0CEATMA1 is 60A.

  2. What is the voltage rating of IPD60R1K0CEATMA1?

    • IPD60R1K0CEATMA1 has a voltage rating of 100V.

  3. What is the on-state resistance of IPD60R1K0CEATMA1?

    • The on-state resistance of IPD60R1K0CEATMA1 is 1.0 mΩ.

  4. What type of package does IPD60R1K0CEATMA1 come in?

    • IPD60R1K0CEATMA1 comes in a TO-252-3 package.

  5. Is IPD60R1K0CEATMA1 suitable for high-frequency applications?

    • Yes, IPD60R1K0CEATMA1 is suitable for high-frequency applications due to its low on-state resistance.

  6. What are the typical applications of IPD60R1K0CEATMA1?

    • IPD60R1K0CEATMA1 is commonly used in motor control, power supplies, and DC-DC converters.

  7. Does IPD60R1K0CEATMA1 have built-in protection features?

    • Yes, IPD60R1K0CEATMA1 has built-in overcurrent and thermal protection.

  8. What is the operating temperature range of IPD60R1K0CEATMA1?

    • IPD60R1K0CEATMA1 has an operating temperature range of -55°C to 150°C.

  9. Can IPD60R1K0CEATMA1 be used in automotive applications?

    • Yes, IPD60R1K0CEATMA1 is suitable for automotive applications due to its robust design and high current capability.

  10. Is there a recommended heatsink for IPD60R1K0CEATMA1?

    • It is recommended to use a suitable heatsink to ensure optimal thermal performance when using IPD60R1K0CEATMA1 in high-power applications.