IPD65R950CFDBTMA1

Product Overview

Use

It is used as a high-voltage switch in various electronic applications, including power supplies, motor control, and lighting.

Characteristics

High voltage capability
Low on-resistance
Fast switching speed
Low gate charge

Package

The IPD65R950CFDBTMA1 is typically available in a TO-252-3 package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels with quantities varying based on manufacturer specifications.

Specifications

Drain-Source Voltage (VDS): 650V
Continuous Drain Current (ID): 6.5A
On-Resistance (RDS(on)): 0.95Ω
Power Dissipation (PD): 48W
Gate-Source Voltage (VGS): ±20V
Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The IPD65R950CFDBTMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

High voltage capability allows for use in demanding applications.
Low on-resistance minimizes power loss and improves efficiency.
Fast switching speed enables rapid response in switching applications.

Advantages

Suitable for high-voltage applications
Low power dissipation
Fast switching speed

Disadvantages

May require careful handling due to high voltage capability
Sensitive to overvoltage conditions

Working Principles

The IPD65R950CFDBTMA1 operates based on the principles of field-effect transistors, utilizing its gate-source voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

This MOSFET is well-suited for use in: - Switch-mode power supplies - Motor control circuits - LED lighting applications

Detailed and Complete Alternative Models

Some alternative models to the IPD65R950CFDBTMA1 include: - IPD60R190C6 - Similar voltage and current ratings - IPD50R380CE - Lower voltage rating but higher current capability - IPD70R600P7 - Higher voltage rating with similar current capacity

Note: The alternative models should be verified based on specific application requirements.

This content provides a comprehensive overview of the IPD65R950CFDBTMA1, covering its basic information, specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

Lista 10 Vanliga frågor och svar relaterade till tillämpningen av IPD65R950CFDBTMA1 i tekniska lösningar

What is the maximum drain-source voltage of IPD65R950CFDBTMA1?
- The maximum drain-source voltage of IPD65R950CFDBTMA1 is 650V.
What is the typical on-resistance of IPD65R950CFDBTMA1?
- The typical on-resistance of IPD65R950CFDBTMA1 is 0.95 ohms.
What is the maximum continuous drain current of IPD65R950CFDBTMA1?
- The maximum continuous drain current of IPD65R950CFDBTMA1 is 6.5A.
What is the gate-source voltage for turn-on and turn-off of IPD65R950CFDBTMA1?
- The gate-source voltage for turn-on and turn-off of IPD65R950CFDBTMA1 is typically ±20V.
What are the recommended operating temperature range for IPD65R950CFDBTMA1?
- The recommended operating temperature range for IPD65R950CFDBTMA1 is -55°C to 150°C.
Is IPD65R950CFDBTMA1 suitable for high-frequency switching applications?
- Yes, IPD65R950CFDBTMA1 is suitable for high-frequency switching applications due to its low on-resistance and fast switching characteristics.
Does IPD65R950CFDBTMA1 require a heat sink for operation?
- It is recommended to use a heat sink for IPD65R950CFDBTMA1 to ensure optimal thermal performance, especially in high-power applications.
What are the typical applications for IPD65R950CFDBTMA1?
- Typical applications for IPD65R950CFDBTMA1 include motor control, power supplies, inverters, and other industrial and automotive applications.
Does IPD65R950CFDBTMA1 have built-in protection features?
- IPD65R950CFDBTMA1 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
What are the key advantages of using IPD65R950CFDBTMA1 in technical solutions?
- The key advantages of using IPD65R950CFDBTMA1 include high voltage capability, low on-resistance, fast switching speed, and suitability for various power electronics applications.