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NSS60100DMTTBG Dual 60 V, 1 A, Low VCE(sat) PNP Bipolar Transistors, WDFN6 encapsulation

NSS60100DMTTBG

Dual 60 V, 1 A, Low VCE(sat) PNP Bipolar Transistors, WDFN6 encapsulation
Artikelnummer
NSS60100DMTTBG
Kategori
Triode/MOS Tube/Transistor > Triode(BJT)
Tillverkare/varumärke
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Inkapsling
W-DFN-6(2x2)
Förpackning
taping
Antal paket
3000
Beskrivning
ON Semiconductor's e2PowerEdge series of low VCE(sat) bipolar transistors feature ultra-low saturation voltage VCE(sat) and high current gain capability in a small 2x2 mm plastic leadless encapsulation. These devices are designed for low-voltage, high-speed switching applications that require economical and efficient energy control. In the automotive industry, they are used in airbag deployment and various instrument panels. The high current gain allows the e2PowerEdge device to be driven directly from the control output of a PMU, while the linear gain (Beta) makes it an ideal component for an analog amplifier.
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