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FDS2070N7
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FDS2070N7

MOSFET N-CH 150V 4.1A 8-SOIC
Artikelnummer
FDS2070N7
Tillverkare/varumärke
ON Semiconductor
Serier
PowerTrench®
Sektionsstatus
Obsolete
Förpackning
Cut Tape (CT)
Teknologi
MOSFET (Metal Oxide)
Driftstemperatur
-55°C ~ 150°C (TJ)
Monteringstyp
Surface Mount
Paket/fodral
8-SOIC (0.154", 3.90mm Width)
Leverantörsenhetspaket
8-SO
Effektförlust (max)
3W (Ta)
FET typ
N-Channel
FET-funktioner
-
Dränera till spänningskälla (Vdss)
150V
Ström - Kontinuerlig dränering (Id) @ 25°C
4.1A (Ta)
Aktiva Rds (Max) @ Id, Vgs
78 mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Portkostnad (Qg) (Max) @ Vgs
53nC @ 10V
Ingångskapacitans (Ciss) (Max) @ Vds
1884pF @ 75V
Drivspänning (Max Active Rds, Min Active Rds)
6V, 10V
Vgs (max)
±20V
Begäran om begäran
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I lager 31169 PCS
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